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BSS806NEH6327XTSA1
Power MOSFET, N Channel, 20 V, 2.3 A, 0.057 ohm, SOT-23, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoBSS806NEH6327XTSA1
Newark Part No.68AC4434
Technical Datasheet
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| Quantity | Price |
|---|---|
| 1+ | $0.068 |
| 10+ | $0.068 |
| 25+ | $0.068 |
| 50+ | $0.068 |
| 100+ | $0.068 |
| 250+ | $0.068 |
| 500+ | $0.068 |
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Product Information
ManufacturerINFINEON
Manufacturer Part NoBSS806NEH6327XTSA1
Newark Part No.68AC4434
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id2.3A
On Resistance Rds(on)0.041ohm
Drain Source On State Resistance0.057ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage2.5V
Gate Source Threshold Voltage Max550mV
Power Dissipation500mW
Power Dissipation Pd500mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification StandardAEC-Q101
MSL-
Alternatives for BSS806NEH6327XTSA1
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Product Overview
- N-channel Optima's™-2 small signal transistor
- Enhancement mode
- Ultra-logic level (1.8V rated)
- ESD protected
- Avalanche rated
- Qualified according to AEC Q101
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
20V
On Resistance Rds(on)
0.041ohm
Transistor Case Style
SOT-23
Rds(on) Test Voltage
2.5V
Power Dissipation
500mW
No. of Pins
3Pins
Product Range
-
Automotive Qualification Standard
AEC-Q101
SVHC
No SVHC (21-Jan-2025)
Channel Type
N Channel
Continuous Drain Current Id
2.3A
Drain Source On State Resistance
0.057ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
550mV
Power Dissipation Pd
500mW
Operating Temperature Max
150°C
Qualification
-
MSL
-
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate