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BSZ12DN20NS3GATMA1
Power MOSFET, N Channel, 200 V, 11.3 A, 0.125 ohm, TSDSON, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoBSZ12DN20NS3GATMA1
Newark Part No.13AC8354
Product RangeOptiMOS 3 Series
Technical Datasheet
No Longer Available
Product Information
ManufacturerINFINEON
Manufacturer Part NoBSZ12DN20NS3GATMA1
Newark Part No.13AC8354
Product RangeOptiMOS 3 Series
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds200V
Continuous Drain Current Id11.3A
On Resistance Rds(on)0.108ohm
Drain Source On State Resistance0.125ohm
Transistor Case StyleTSDSON
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd50W
Gate Source Threshold Voltage Max3V
Power Dissipation50W
No. of Pins8Pins
Operating Temperature Max150°C
Product RangeOptiMOS 3 Series
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
200V
On Resistance Rds(on)
0.108ohm
Transistor Case Style
TSDSON
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
3V
No. of Pins
8Pins
Product Range
OptiMOS 3 Series
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
11.3A
Drain Source On State Resistance
0.125ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
50W
Power Dissipation
50W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate