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IMBG65R022M1HXTMA1
Silicon Carbide MOSFET, Single, N Channel, 64 A, 650 V, 0.022 ohm, TO-263
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ManufacturerINFINEON
Manufacturer Part NoIMBG65R022M1HXTMA1
Newark Part No.26AK5704
Product RangeCoolSiC M1 Trench Series
Technical Datasheet
819 In Stock
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| Quantity | Price |
|---|---|
| 1+ | $20.850 |
| 10+ | $14.700 |
| 25+ | $14.220 |
| 50+ | $13.770 |
| 100+ | $13.290 |
| 250+ | $12.470 |
| 500+ | $11.670 |
| 1000+ | $10.850 |
Price for:Each (Supplied on Cut Tape)
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Multiple: 1
$20.85
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Product Information
ManufacturerINFINEON
Manufacturer Part NoIMBG65R022M1HXTMA1
Newark Part No.26AK5704
Product RangeCoolSiC M1 Trench Series
Technical Datasheet
MOSFET Module ConfigurationSingle
Transistor PolarityN Channel
Channel TypeN Channel
Continuous Drain Current Id64A
Drain Source Voltage Vds650V
Drain Source On State Resistance0.022ohm
On Resistance Rds(on)0.022ohm
Transistor Case StyleTO-263
No. of Pins7Pins
Rds(on) Test Voltage18V
Gate Source Threshold Voltage Max4.5V
Power Dissipation Pd300W
Power Dissipation300W
Operating Temperature Max175°C
Product RangeCoolSiC M1 Trench Series
MSL-
Technical Specifications
MOSFET Module Configuration
Single
Channel Type
N Channel
Drain Source Voltage Vds
650V
On Resistance Rds(on)
0.022ohm
No. of Pins
7Pins
Gate Source Threshold Voltage Max
4.5V
Power Dissipation
300W
Product Range
CoolSiC M1 Trench Series
SVHC
No SVHC (21-Jan-2025)
Transistor Polarity
N Channel
Continuous Drain Current Id
64A
Drain Source On State Resistance
0.022ohm
Transistor Case Style
TO-263
Rds(on) Test Voltage
18V
Power Dissipation Pd
300W
Operating Temperature Max
175°C
MSL
-
Technical Docs (1)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability