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IMDQ65R020M2HXUMA1
Silicon Carbide MOSFET, Single, N Channel, 97 A, 650 V, 0.018 ohm, HDSOP
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ManufacturerINFINEON
Manufacturer Part NoIMDQ65R020M2HXUMA1
Newark Part No.
Re-Reel25AM8246
Cut Tape25AM8246
Product RangeCoolSiC G2 Series
Your Part Number
200 In Stock
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Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | $14.880 | $14.88 |
| Total Price | $14.88 | ||
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 1+ | $14.880 |
| 10+ | $11.680 |
| 25+ | $10.870 |
| 50+ | $10.430 |
| 100+ | $10.000 |
| 250+ | $9.580 |
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerINFINEON
Manufacturer Part NoIMDQ65R020M2HXUMA1
Newark Part No.
Re-Reel25AM8246
Cut Tape25AM8246
Product RangeCoolSiC G2 Series
Technical Datasheet
MOSFET Module ConfigurationSingle
Channel TypeN Channel
Continuous Drain Current Id97A
Drain Source Voltage Vds650V
Drain Source On State Resistance0.018ohm
Transistor Case StyleHDSOP
No. of Pins22Pins
Rds(on) Test Voltage20V
Gate Source Threshold Voltage Max5.6V
Power Dissipation394W
Operating Temperature Max175°C
Product RangeCoolSiC G2 Series
SVHCNo SVHC (25-Jun-2025)
Product Overview
IMDQ65R020M2HXUMA1 is a CoolSiC™ MOSFET 650V Generation 2 (G2) (G2) in Q-DPAK package. It utilizes the G2 superior switching performance, which also provides advantages of top-side cooling. This innovation enhances the current offerings of CoolSiC™ in TOLT and CoolMOS™ in Q-DPAK packages, facilitating comprehensive system-level enhancements, including reductions in board space and BOM costs, as well as maximization of system power density. Typical applications include SMPS, solar PV inverters, energy storage and battery formation, UPS, EV charging infrastructure and motor drives.
- 20mohm RDs(on) typical
- Ultra‑low switching losses
- Benchmark gate threshold voltage, VGS(th) = 4.5V
- Robust against parasitic turn‑on even with 0V turn‑off gate voltage
- Flexible driving voltage and compatible with bipolar driving scheme
- Robust body diode operation under hard commutation events
- .XT interconnection technology for best‑in‑class thermal performance
- Enables high efficiency and high power density designs
Technical Specifications
MOSFET Module Configuration
Single
Continuous Drain Current Id
97A
Drain Source On State Resistance
0.018ohm
No. of Pins
22Pins
Gate Source Threshold Voltage Max
5.6V
Operating Temperature Max
175°C
SVHC
No SVHC (25-Jun-2025)
Channel Type
N Channel
Drain Source Voltage Vds
650V
Transistor Case Style
HDSOP
Rds(on) Test Voltage
20V
Power Dissipation
394W
Product Range
CoolSiC G2 Series
Technical Docs (1)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate