IMDQ65R020M2HXUMA1
Silicon Carbide MOSFET, Single, N Channel, 97 A, 650 V, 0.018 ohm, HDSOP
Vous en voulez davantage ?
| Type de conditionnement | Quantité | PU HT: | Total |
|---|---|---|---|
| Bandes découpées | 1 | 14,880 $ | 14,88 $ |
| Total Prix | 14,88 $ | ||
| Quantité | Prix |
|---|---|
| 1+ | 14,880 $ |
| 10+ | 11,680 $ |
| 25+ | 10,870 $ |
| 50+ | 10,430 $ |
| 100+ | 10,000 $ |
| 250+ | 9,580 $ |
Informations produit
Aperçu du produit
IMDQ65R020M2HXUMA1 is a CoolSiC™ MOSFET 650V Generation 2 (G2) (G2) in Q-DPAK package. It utilizes the G2 superior switching performance, which also provides advantages of top-side cooling. This innovation enhances the current offerings of CoolSiC™ in TOLT and CoolMOS™ in Q-DPAK packages, facilitating comprehensive system-level enhancements, including reductions in board space and BOM costs, as well as maximization of system power density. Typical applications include SMPS, solar PV inverters, energy storage and battery formation, UPS, EV charging infrastructure and motor drives.
- 20mohm RDs(on) typical
- Ultra‑low switching losses
- Benchmark gate threshold voltage, VGS(th) = 4.5V
- Robust against parasitic turn‑on even with 0V turn‑off gate voltage
- Flexible driving voltage and compatible with bipolar driving scheme
- Robust body diode operation under hard commutation events
- .XT interconnection technology for best‑in‑class thermal performance
- Enables high efficiency and high power density designs
Spécifications techniques
Single
97A
0.018ohm
22Pins
5.6V
175°C
No SVHC (25-Jun-2025)
N Channel
650V
HDSOP
20V
394W
CoolSiC G2 Series
Documents techniques (1)
Législation et Questions environnementales
RoHS
RoHS
Certificat de conformité du produit