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IMZA120R007M1HXKSA1
Silicon Carbide MOSFET, Single, N Channel, 225 A, 1.2 kV, 0.007 ohm, TO-247
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ManufacturerINFINEON
Manufacturer Part NoIMZA120R007M1HXKSA1
Newark Part No.32AK4933
Product RangeCoolSiC Trench Series
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| Quantity | Price |
|---|---|
| 1+ | $85.140 |
| 5+ | $79.690 |
| 10+ | $74.230 |
Price for:Each
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Multiple: 1
$85.14
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Product Information
ManufacturerINFINEON
Manufacturer Part NoIMZA120R007M1HXKSA1
Newark Part No.32AK4933
Product RangeCoolSiC Trench Series
Technical Datasheet
MOSFET Module ConfigurationSingle
Channel TypeN Channel
Transistor PolarityN Channel
Continuous Drain Current Id225A
Drain Source Voltage Vds1.2kV
Drain Source On State Resistance0.007ohm
On Resistance Rds(on)0.007ohm
Transistor Case StyleTO-247
No. of Pins4Pins
Rds(on) Test Voltage18V
Gate Source Threshold Voltage Max4.2V
Power Dissipation Pd750W
Power Dissipation750W
Operating Temperature Max175°C
Product RangeCoolSiC Trench Series
SVHCNo SVHC (25-Jun-2025)
Product Overview
IMZA120R007M1HXKSA1 is a CoolSiC™ 1200V SiC Trench MOSFET. Potential applications include general purpose drives (GPD), EV charging, online UPS/industrial UPS, string inverter, solar power optimizer.
- Very low switching losses
- Benchmark gate threshold voltage, VGS(th) = 4.2V
- Robust against parasitic turn on, 0V turn-off gate voltage can be applied
- Robust body diode for hard commutation
- .XT interconnection technology for best-in-class thermal performance
- Qualified for industrial applications according to the relevant tests of JEDEC47/20/22
- Drain-source voltage is 1200V at Tvj ≥ 25°C
- Drain-source on-state resistance is 7mohm typ at Tvj = 25°C, VGS(on) = 18V, ID = 108A
- PG-TO247-4-U02 package
- Storage temperature range from -55 to 150°C
Technical Specifications
MOSFET Module Configuration
Single
Transistor Polarity
N Channel
Drain Source Voltage Vds
1.2kV
On Resistance Rds(on)
0.007ohm
No. of Pins
4Pins
Gate Source Threshold Voltage Max
4.2V
Power Dissipation
750W
Product Range
CoolSiC Trench Series
Channel Type
N Channel
Continuous Drain Current Id
225A
Drain Source On State Resistance
0.007ohm
Transistor Case Style
TO-247
Rds(on) Test Voltage
18V
Power Dissipation Pd
750W
Operating Temperature Max
175°C
SVHC
No SVHC (25-Jun-2025)
Technical Docs (1)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate