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IPB065N15N3GATMA1
Power MOSFET, N Channel, 150 V, 130 A, 0.0065 ohm, TO-263 (D2PAK), Surface Mount
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| Quantity | Price |
|---|---|
| 1+ | $1.690 |
| 10+ | $1.690 |
| 25+ | $1.690 |
| 50+ | $1.690 |
| 100+ | $1.690 |
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Multiple: 1
$1.69
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Product Information
ManufacturerINFINEON
Manufacturer Part NoIPB065N15N3GATMA1
Newark Part No.85X6014
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds150V
Continuous Drain Current Id130A
Drain Source On State Resistance6500µohm
On Resistance Rds(on)0.0052ohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation Pd300W
Power Dissipation300W
No. of Pins7Pins
Operating Temperature Max175°C
Product Range-
Qualification-
SVHCNo SVHC (21-Jan-2025)
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Product Overview
- OptiMOS™ P3 power transistor
- N-channel normal level
- Excellent gate charge xR DS(on) product (FOM)
- Very low on-resistance RDS(on)
- 175°C operating temperature
- Qualified according to JEDEC for target application
- Ideal for high-frequency switching and synchronous rectification
- Halogen-free according to IEC61249-21
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
150V
Drain Source On State Resistance
6500µohm
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
10V
Power Dissipation Pd
300W
No. of Pins
7Pins
Product Range
-
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
130A
On Resistance Rds(on)
0.0052ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3V
Power Dissipation
300W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate