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IPB083N10N3GATMA1
Power MOSFET, N Channel, 100 V, 80 A, 0.0083 ohm, TO-263 (D2PAK), Surface Mount
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| Quantity | Price |
|---|---|
| 1+ | $3.050 |
| 10+ | $1.910 |
| 25+ | $1.800 |
| 50+ | $1.670 |
| 100+ | $1.560 |
| 250+ | $1.390 |
| 500+ | $1.230 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$3.05
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Product Information
ManufacturerINFINEON
Manufacturer Part NoIPB083N10N3GATMA1
Newark Part No.47Y8048
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id80A
Drain Source On State Resistance0.0083ohm
On Resistance Rds(on)0.0072ohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.7V
Power Dissipation Pd125W
Power Dissipation125W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
Alternatives for IPB083N10N3GATMA1
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Product Overview
- OptiMOS™3 power transistor
- N-channel, normal level
- Excellent gate charge x R DS(on) product (FOM)
- Very low on-resistance R DS(on)
- Qualified according to JEDEC for target application
- Ideal for high frequency switching and synchronous rectification
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.0083ohm
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
10V
Power Dissipation Pd
125W
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
80A
On Resistance Rds(on)
0.0072ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.7V
Power Dissipation
125W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Associated Products
1 Product Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate