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IPB60R060C7ATMA1
MOSFET, N-CH, 600V, 35A, 162W, TO-263
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoIPB60R060C7ATMA1
Newark Part No.93AC7104
Product RangeCoolMOS C7
Technical Datasheet
778 In Stock
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| Quantity | Price |
|---|---|
| 1+ | $11.040 |
| 10+ | $8.220 |
| 25+ | $7.660 |
| 50+ | $7.090 |
| 100+ | $6.540 |
| 250+ | $6.500 |
| 500+ | $6.450 |
| 1000+ | $6.410 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$11.04
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Product Information
ManufacturerINFINEON
Manufacturer Part NoIPB60R060C7ATMA1
Newark Part No.93AC7104
Product RangeCoolMOS C7
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds600V
Continuous Drain Current Id35A
On Resistance Rds(on)0.052ohm
Drain Source On State Resistance0.052ohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd162W
Gate Source Threshold Voltage Max3.5V
Power Dissipation162W
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeCoolMOS C7
Qualification-
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
600V
On Resistance Rds(on)
0.052ohm
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
3.5V
No. of Pins
3Pins
Product Range
CoolMOS C7
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
35A
Drain Source On State Resistance
0.052ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
162W
Power Dissipation
162W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (1)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability