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IPB60R099C7ATMA1
MOSFET, N-CH, 650V, 150DEG C, 110W ROHS COMPLIANT: YES
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ManufacturerINFINEON
Manufacturer Part NoIPB60R099C7ATMA1
Newark Part No.39AH8899
Product RangeCoolMOS C7
Technical Datasheet
191 In Stock
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Delivery in 2-4 Business Days(UK stock)
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| Quantity | Price |
|---|---|
| 1+ | $7.070 |
| 10+ | $4.980 |
| 25+ | $4.510 |
| 50+ | $4.040 |
| 100+ | $3.560 |
| 250+ | $3.510 |
| 500+ | $3.440 |
| 1000+ | $3.090 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$7.07
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Product Information
ManufacturerINFINEON
Manufacturer Part NoIPB60R099C7ATMA1
Newark Part No.39AH8899
Product RangeCoolMOS C7
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds600V
Continuous Drain Current Id22A
On Resistance Rds(on)0.085ohm
Drain Source On State Resistance0.085ohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Power Dissipation Pd110W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3.5V
Power Dissipation110W
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeCoolMOS C7
Qualification-
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
600V
On Resistance Rds(on)
0.085ohm
Transistor Case Style
TO-263 (D2PAK)
Power Dissipation Pd
110W
Gate Source Threshold Voltage Max
3.5V
No. of Pins
3Pins
Product Range
CoolMOS C7
SVHC
No SVHC (21-Jan-2025)
Transistor Polarity
N Channel
Continuous Drain Current Id
22A
Drain Source On State Resistance
0.085ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Power Dissipation
110W
Operating Temperature Max
150°C
Qualification
-
Technical Docs (1)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability