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IPB65R045C7ATMA2
MOSFET, N-CH, 650V, 46A, 150DEG C, 227W
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ManufacturerINFINEON
Manufacturer Part NoIPB65R045C7ATMA2
Newark Part No.28AH2680
Product RangeCoolMOS C7
Technical Datasheet
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| Quantity | Price |
|---|---|
| 1+ | $13.580 |
| 10+ | $9.390 |
| 25+ | $8.800 |
| 50+ | $8.220 |
| 100+ | $7.640 |
| 250+ | $7.640 |
| 500+ | $7.620 |
| 1000+ | $6.560 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$13.58
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Product Information
ManufacturerINFINEON
Manufacturer Part NoIPB65R045C7ATMA2
Newark Part No.28AH2680
Product RangeCoolMOS C7
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds650V
Continuous Drain Current Id46A
Drain Source On State Resistance0.045ohm
On Resistance Rds(on)0.04ohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3.5V
Power Dissipation227W
Power Dissipation Pd227W
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeCoolMOS C7
Qualification-
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
650V
Drain Source On State Resistance
0.045ohm
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
10V
Power Dissipation
227W
No. of Pins
3Pins
Product Range
CoolMOS C7
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
46A
On Resistance Rds(on)
0.04ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3.5V
Power Dissipation Pd
227W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (1)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate