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IPB65R110CFD7ATMA1
MOSFET, N-CH, 650V, 22A, TO-263 ROHS COMPLIANT: YES
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ManufacturerINFINEON
Manufacturer Part NoIPB65R110CFD7ATMA1
Newark Part No.45AJ4670
Product RangeCoolMOS CFD7 SJ
Technical Datasheet
783 In Stock
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| Quantity | Price |
|---|---|
| 1+ | $6.340 |
| 10+ | $4.290 |
| 25+ | $3.880 |
| 50+ | $3.490 |
| 100+ | $3.090 |
| 250+ | $2.880 |
| 500+ | $2.660 |
| 1000+ | $2.440 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$6.34
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Product Information
ManufacturerINFINEON
Manufacturer Part NoIPB65R110CFD7ATMA1
Newark Part No.45AJ4670
Product RangeCoolMOS CFD7 SJ
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds650V
Continuous Drain Current Id22A
On Resistance Rds(on)0.088ohm
Drain Source On State Resistance0.088ohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation114W
Power Dissipation Pd114W
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeCoolMOS CFD7 SJ
Qualification-
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
650V
On Resistance Rds(on)
0.088ohm
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
10V
Power Dissipation
114W
No. of Pins
3Pins
Product Range
CoolMOS CFD7 SJ
SVHC
No SVHC (21-Jan-2025)
Transistor Polarity
N Channel
Continuous Drain Current Id
22A
Drain Source On State Resistance
0.088ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4V
Power Dissipation Pd
114W
Operating Temperature Max
150°C
Qualification
-
Technical Docs (1)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability