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| Quantity | Price |
|---|---|
| 1+ | $1.400 |
| 10+ | $1.280 |
| 25+ | $1.280 |
| 50+ | $1.280 |
| 100+ | $1.190 |
| 250+ | $1.190 |
Price for:Each (Supplied on Cut Tape)
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Multiple: 1
$1.40
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Product Information
ManufacturerINFINEON
Manufacturer Part NoIPD082N10N3GATMA1
Newark Part No.12AC9706
Product RangeOptiMOS 3
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id80A
Drain Source On State Resistance0.0082ohm
On Resistance Rds(on)0.007ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.7V
Power Dissipation Pd125W
Power Dissipation125W
No. of Pins3Pins
Operating Temperature Max175°C
Product RangeOptiMOS 3
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (21-Jan-2025)
Alternatives for IPD082N10N3GATMA1
3 Products Found
Product Overview
- OptiMOS™3 power transistor
- N-channel, normal level
- Excellent gate charge x RDS(on) product (FOM)
- Very low on-resistance R DS(on)
- Qualified according to JEDEC for target application
- Ideal for high frequency switching and synchronous rectification
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.0082ohm
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
10V
Power Dissipation Pd
125W
No. of Pins
3Pins
Product Range
OptiMOS 3
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
80A
On Resistance Rds(on)
0.007ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.7V
Power Dissipation
125W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate