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IPD90N10S4L06ATMA1
Power MOSFET, N Channel, 100 V, 90 A, 0.0066 ohm, TO-252 (DPAK), Surface Mount
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ManufacturerINFINEON
Manufacturer Part NoIPD90N10S4L06ATMA1
Newark Part No.34AC1693
Product RangeOptiMOS T2
Your Part Number
Technical Datasheet
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| 1+ | $5.220 |
| 10+ | $3.090 |
| 25+ | $2.840 |
| 50+ | $2.580 |
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| Quantity | Price |
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Product Information
ManufacturerINFINEON
Manufacturer Part NoIPD90N10S4L06ATMA1
Newark Part No.34AC1693
Product RangeOptiMOS T2
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id90A
On Resistance Rds(on)0.0058ohm
Drain Source On State Resistance0.0066ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.6V
Power Dissipation Pd136W
Power Dissipation136W
No. of Pins3Pins
Operating Temperature Max175°C
Product RangeOptiMOS T2
QualificationAEC-Q101
Automotive Qualification StandardAEC-Q101
SVHCNo SVHC (25-Jun-2025)
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Product Overview
- OptiMOS® -T2 power transistor
- N-channel - enhancement mode
- Automotive AEC Q101 qualified
- 175°C operating temperature
- 100% avalanche tested
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
100V
On Resistance Rds(on)
0.0058ohm
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
10V
Power Dissipation Pd
136W
No. of Pins
3Pins
Product Range
OptiMOS T2
Automotive Qualification Standard
AEC-Q101
SVHC
No SVHC (25-Jun-2025)
Channel Type
N Channel
Continuous Drain Current Id
90A
Drain Source On State Resistance
0.0066ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.6V
Power Dissipation
136W
Operating Temperature Max
175°C
Qualification
AEC-Q101
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate