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IPP072N10N3GXKSA1
Power MOSFET, N Channel, 100 V, 80 A, 0.0072 ohm, TO-220, Through Hole
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| Quantity | Price |
|---|---|
| 1+ | $4.010 |
| 10+ | $2.050 |
| 100+ | $1.760 |
| 500+ | $1.660 |
| 1000+ | $1.590 |
| 2500+ | $1.570 |
| 5000+ | $1.570 |
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Multiple: 1
$4.01
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Product Information
ManufacturerINFINEON
Manufacturer Part NoIPP072N10N3GXKSA1
Newark Part No.50Y2057
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id80A
Drain Source On State Resistance0.0072ohm
On Resistance Rds(on)0.0062ohm
Transistor Case StyleTO-220
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.7V
Power Dissipation Pd150W
Power Dissipation150W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
SVHCNo SVHC (21-Jan-2025)
Product Overview
- OptiMOS™ 3 power transistor
- N-channel, normal level
- Excellent gate charge xRDS (on) product (FOM)
- Very low on-resistance RDS(on)
- 175°C operating temperature
- Qualified according to JEDEC for target application
- Ideal for high-frequency switching and synchronous rectification
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.0072ohm
Transistor Case Style
TO-220
Rds(on) Test Voltage
10V
Power Dissipation Pd
150W
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
80A
On Resistance Rds(on)
0.0062ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
2.7V
Power Dissipation
150W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (1)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate