Print Page
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoIPT059N15N3ATMA1
Newark Part No.50Y2080
Product RangeOptiMOS 3 Series
Also Known AsIPT059N15N3, SP001100162
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 14 week(s)
Quantity | Price |
---|---|
1+ | $5.410 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$5.41
Enter Your Part No/Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerINFINEON
Manufacturer Part NoIPT059N15N3ATMA1
Newark Part No.50Y2080
Product RangeOptiMOS 3 Series
Also Known AsIPT059N15N3, SP001100162
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds150V
Continuous Drain Current Id155A
Drain Source On State Resistance0.005ohm
On Resistance Rds(on)0.005ohm
Transistor Case StyleHSOF
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd375W
Gate Source Threshold Voltage Max3V
Power Dissipation375W
No. of Pins8Pins
Operating Temperature Max175°C
Product RangeOptiMOS 3 Series
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (21-Jan-2025)
Product Overview
IPT059N15N3ATMA1 is an OptiMOS™3 N-channel power MOSFET. Potential applications are forklift, light electric vehicles (LEV) e.g. e-scooter, e-bikes or µ-car, Point-of-load (POL), telecom, efuse.
- Normal level, excellent gate charge xRDS(on) product (FOM)
- Very low on-resistance RDS (on), 175°C operating temperature, PG-HSOF-8 package
- Qualified according to JEDEC for target application
- Ideal for high-frequency switching and synchronous rectification
- Halogen-free according to IEC61249-2-21
- Less paralleling and cooling required, highest system reliability
- System cost reduction, enabling very compact design
- Drain-source on-state resistance is 5.9mohm at VGS=10V, ID=150A
- Diode continuous forward current is 155A at TC=25°C
- Drain-source breakdown voltage is 150V at VGS=0V, ID=1mA
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
150V
Drain Source On State Resistance
0.005ohm
Transistor Case Style
HSOF
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
3V
No. of Pins
8Pins
Product Range
OptiMOS 3 Series
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
155A
On Resistance Rds(on)
0.005ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
375W
Power Dissipation
375W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (1)
Alternatives for IPT059N15N3ATMA1
1 Product Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate