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IPW60R190P6FKSA1
Power MOSFET, N Channel, 600 V, 20.2 A, 0.19 ohm, TO-247, Through Hole
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ManufacturerINFINEON
Manufacturer Part NoIPW60R190P6FKSA1
Newark Part No.54X5233
Also Known AsIPW60R190P6, SP001017090
Technical Datasheet
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| Quantity | Price |
|---|---|
| 1+ | $2.060 |
| 10+ | $2.060 |
| 25+ | $2.060 |
| 50+ | $2.060 |
| 100+ | $2.060 |
| 480+ | $2.060 |
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Product Information
ManufacturerINFINEON
Manufacturer Part NoIPW60R190P6FKSA1
Newark Part No.54X5233
Also Known AsIPW60R190P6, SP001017090
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds600V
Continuous Drain Current Id20.2A
On Resistance Rds(on)0.171ohm
Drain Source On State Resistance0.19ohm
Transistor Case StyleTO-247
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Power Dissipation Pd151W
Gate Source Threshold Voltage Max4V
Power Dissipation151W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
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Product Overview
The IPW60R190P6 is a 600V CoolMOS™ P6 N-channel Power MOSFET with reduced gate charge. This CoolMOS™ is a revolutionary technology for high voltage power MOSFET, designed according to the super-junction(SJ) principle and pioneered by Infineon Technologies. The CoolMOS™ P6 combines the experience of the leading SJ MOSFET supplier with high class innovation. The device provides all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter and cooler.
- Extremely low losses due to very low figure of merit (RDS (ON) x Qg and EOSS)
- Very high commutation ruggedness
- Easy to use
- Increased dV/dt ruggedness
- Halogen-free, Green device
- Qualified according to JEDEC for target applications
- Higher Vth
- Optimized integrated Rg
- Improved efficiency especially in light load condition
- Better efficiency in soft switching applications due to earlier turn-OFF
- Suitable for hard and soft-switching topologies
- Optimized balance of efficiency and ease of use and good controllability of switching behaviour
- High robustness and better efficiency
- Outstanding quality and reliability
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
600V
On Resistance Rds(on)
0.171ohm
Transistor Case Style
TO-247
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
MSL
-
Channel Type
N Channel
Continuous Drain Current Id
20.2A
Drain Source On State Resistance
0.19ohm
Transistor Mounting
Through Hole
Power Dissipation Pd
151W
Power Dissipation
151W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (3)
Associated Products
6 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate