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Product Information
ManufacturerINFINEON
Manufacturer Part NoIRF1407PBF.
Newark Part No.27AC6861
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds75V
Continuous Drain Current Id130A
Drain Source On State Resistance0.0078ohm
On Resistance Rds(on)0.0078ohm
Transistor MountingThrough Hole
Power Dissipation Pd330W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Transistor Case StyleTO-220AB
Power Dissipation330W
No. of Pins3Pins
Operating Temperature Max175°C
Qualification-
Product Range-
MSL-
SVHCNo SVHC (21-Jan-2025)
Product Overview
The IRF1407PBF is a HEXFET® single N-channel Power MOSFET utilizes the latest processing techniques to achieve extremely low ON-resistance per silicon area. Additional features of this HEXFET® power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
- Advanced process technology
- Dynamic dV/dt rating
- Repetitive avalanche allowed up to Tjmax
Applications
Motor Drive & Control, Automotive, Power Management
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
75V
Drain Source On State Resistance
0.0078ohm
Transistor Mounting
Through Hole
Rds(on) Test Voltage
10V
Transistor Case Style
TO-220AB
No. of Pins
3Pins
Qualification
-
MSL
-
Channel Type
N Channel
Continuous Drain Current Id
130A
On Resistance Rds(on)
0.0078ohm
Power Dissipation Pd
330W
Gate Source Threshold Voltage Max
4V
Power Dissipation
330W
Operating Temperature Max
175°C
Product Range
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
Associated Products
4 Products Found
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate