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| Quantity | Price |
|---|---|
| 1+ | $4.220 |
| 10+ | $2.230 |
| 100+ | $2.120 |
| 500+ | $1.710 |
| 1000+ | $1.570 |
| 3000+ | $1.520 |
Price for:Each
Minimum: 1
Multiple: 1
$4.22
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Product Information
ManufacturerINFINEON
Manufacturer Part NoIRF3808PBF
Newark Part No.39AH8948
Product RangeHEXFET
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds75V
Continuous Drain Current Id140A
Drain Source On State Resistance0.007ohm
On Resistance Rds(on)0.0059ohm
Transistor Case StyleTO-220AB
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Power Dissipation Pd330W
Gate Source Threshold Voltage Max4V
Power Dissipation330W
No. of Pins3Pins
Operating Temperature Max175°C
Product RangeHEXFET
Qualification-
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
75V
Drain Source On State Resistance
0.007ohm
Transistor Case Style
TO-220AB
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
HEXFET
SVHC
No SVHC (21-Jan-2025)
Channel Type
N Channel
Continuous Drain Current Id
140A
On Resistance Rds(on)
0.0059ohm
Transistor Mounting
Through Hole
Power Dissipation Pd
330W
Power Dissipation
330W
Operating Temperature Max
175°C
Qualification
-
Technical Docs (1)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate