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IRF9362TRPBF
Dual MOSFET, P Channel, 30 V, 30 V, 8 A, 8 A, 0.017 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoIRF9362TRPBF
Newark Part No.79R7564
Product RangeHEXFET Series
Also Known AsSP001555840
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 11 week(s)
| Quantity | Price |
|---|---|
| 1+ | $1.380 |
| 10+ | $0.930 |
| 25+ | $0.922 |
| 50+ | $0.776 |
| 100+ | $0.630 |
Price for:Each (Supplied on Cut Tape)
Minimum: 5
Multiple: 5
$6.90
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Product Information
ManufacturerINFINEON
Manufacturer Part NoIRF9362TRPBF
Newark Part No.79R7564
Product RangeHEXFET Series
Also Known AsSP001555840
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds N Channel30V
Continuous Drain Current Id8A
Drain Source Voltage Vds30V
Drain Source Voltage Vds P Channel30V
Continuous Drain Current Id N Channel8A
Continuous Drain Current Id P Channel8A
Drain Source On State Resistance N Channel0.017ohm
Drain Source On State Resistance P Channel0.017ohm
Transistor Case StyleSOIC
No. of Pins8Pins
Power Dissipation N Channel2W
Power Dissipation P Channel2W
Operating Temperature Max150°C
Product RangeHEXFET Series
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (21-Jan-2025)
Product Overview
The IRF9362TRPBF is a HEXFET® dual P-channel Power MOSFET for use with charge and discharge switch for notebook PC battery applications. It is compatible with existing surface-mount techniques.
- Industry standard package for multi-vendor compatibility
- Halogen-free
Applications
Computers & Computer Peripherals, Power Management
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
8A
Drain Source Voltage Vds P Channel
30V
Continuous Drain Current Id P Channel
8A
Drain Source On State Resistance P Channel
0.017ohm
No. of Pins
8Pins
Power Dissipation P Channel
2W
Product Range
HEXFET Series
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
30V
Drain Source Voltage Vds
30V
Continuous Drain Current Id N Channel
8A
Drain Source On State Resistance N Channel
0.017ohm
Transistor Case Style
SOIC
Power Dissipation N Channel
2W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (3)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate