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IRF9389TRPBF
Dual MOSFET, Complementary N and P Channel, 30 V, 6.8 A, 0.022 ohm, SOIC, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoIRF9389TRPBF
Newark Part No.91Y4762
Product RangeHEXFET Series
Technical Datasheet
479 In Stock
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| Quantity | Price |
|---|---|
| 1+ | $0.793 |
| 10+ | $0.555 |
| 25+ | $0.522 |
| 50+ | $0.487 |
| 100+ | $0.454 |
| 250+ | $0.451 |
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Multiple: 1
$0.79
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Product Information
ManufacturerINFINEON
Manufacturer Part NoIRF9389TRPBF
Newark Part No.91Y4762
Product RangeHEXFET Series
Technical Datasheet
Channel TypeComplementary N and P Channel
Drain Source Voltage Vds30V
Drain Source Voltage Vds N Channel30V
Drain Source Voltage Vds P Channel30V
Continuous Drain Current Id6.8A
Continuous Drain Current Id N Channel6.8A
Continuous Drain Current Id P Channel6.8A
Drain Source On State Resistance N Channel0.022ohm
Drain Source On State Resistance P Channel0.022ohm
Transistor Case StyleSOIC
No. of Pins8Pins
Power Dissipation N Channel2W
Power Dissipation P Channel2W
Operating Temperature Max150°C
Product RangeHEXFET Series
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (21-Jan-2025)
Alternatives for IRF9389TRPBF
1 Product Found
Product Overview
HEXFET® power MOSFET suitable for use in high and low sides switches for inverter, high and low side switches for generic half bridge.
- High-side P-channel MOSFET
- Industry-standard pinout
- Compatible with existing surface mount technique
- Increased power density
- Easier drive circuitry
- Multi-vendor compatibility
- Easier manufacturing
- Environmentally friendlier
- Increased reliability
Technical Specifications
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds N Channel
30V
Continuous Drain Current Id
6.8A
Continuous Drain Current Id P Channel
6.8A
Drain Source On State Resistance P Channel
0.022ohm
No. of Pins
8Pins
Power Dissipation P Channel
2W
Product Range
HEXFET Series
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds
30V
Drain Source Voltage Vds P Channel
30V
Continuous Drain Current Id N Channel
6.8A
Drain Source On State Resistance N Channel
0.022ohm
Transistor Case Style
SOIC
Power Dissipation N Channel
2W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
Associated Products
3 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate