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Product Information
ManufacturerINFINEON
Manufacturer Part NoIRFB3407ZPBF
Newark Part No.49AC0308
Product RangeHEXFET
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds75V
Continuous Drain Current Id122A
Drain Source On State Resistance0.0064ohm
On Resistance Rds(on)0.005ohm
Transistor Case StyleTO-220
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation230W
Power Dissipation Pd230W
No. of Pins3Pins
Operating Temperature Max175°C
Product RangeHEXFET
Qualification-
MSL-
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Product Overview
HEXFET® power MOSFET suitable for use in battery management, high speed power switching and hard switched and high frequency circuits.
- Improved gate, avalanche and dynamic dv/dt ruggedness
- Fully characterized capacitance and avalanche SOA
- Enhanced body diode dV/dt and dI/dt capability
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
75V
Drain Source On State Resistance
0.0064ohm
Transistor Case Style
TO-220
Rds(on) Test Voltage
10V
Power Dissipation
230W
No. of Pins
3Pins
Product Range
HEXFET
MSL
-
Channel Type
N Channel
Continuous Drain Current Id
122A
On Resistance Rds(on)
0.005ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
4V
Power Dissipation Pd
230W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate