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                      1. Home
                      2. Semiconductors - Discretes
                      3. FETs
                      4. Single MOSFETs
                      Print Page

                      IRFP4668PBF

                      Power MOSFET, N Channel, 200 V, 130 A, 0.008 ohm, TO-247AC, Through Hole

                      Date/Lot Code

                      INFINEON IRFP4668PBF
                      Image is for illustrative purposes only. Please refer to product description.
                      ManufacturerINFINEON
                      Manufacturer Part NoIRFP4668PBF
                      Newark Part No.19P2518
                      Product RangeHEXFET Series
                      Technical Datasheet

                      Data Sheet

                      See all Technical Docs
                      10,665 In Stock

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                      QuantityPrice
                      1+$6.200
                      10+$5.200
                      25+$4.190
                      50+$3.880
                      100+$3.580
                      250+$3.470
                      800+$3.340
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                      Multiple: 1
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                      Product Information

                      ManufacturerINFINEON
                      Manufacturer Part NoIRFP4668PBF
                      Newark Part No.19P2518
                      Product RangeHEXFET Series
                      Technical Datasheet

                      Data Sheet

                      Channel TypeN Channel
                      Transistor PolarityN Channel
                      Drain Source Voltage Vds200V
                      Continuous Drain Current Id130A
                      Drain Source On State Resistance0.008ohm
                      On Resistance Rds(on)0.008ohm
                      Transistor Case StyleTO-247AC
                      Transistor MountingThrough Hole
                      Power Dissipation Pd520W
                      Rds(on) Test Voltage30V
                      Gate Source Threshold Voltage Max5V
                      Power Dissipation520W
                      No. of Pins3Pins
                      Operating Temperature Max175°C
                      Product RangeHEXFET Series
                      Qualification-
                      MSL-
                      SVHCNo SVHC (21-Jan-2025)

                      Product Overview

                      The IRFP4668PBF is 200V single N channel HEXFET power MOSFET in TO-247AC package. This MOSFET featured with improved gate, avalanche and dynamic dV/dt ruggedness, fast switching. Applicable at high efficiency synchronous rectification in SMPS, uninterruptible power supply, high speed power switching, hard switched and high frequency circuits.

                      • Enhanced body diode dV/dt and dI/dt capability
                      • Fully characterized capacitance and avalanche SOA
                      • Drain to source voltage (Vds) of 200V
                      • Gate to source voltage of ±30V
                      • On resistance Rds(on) of 8mohm at Vgs 10V
                      • Power dissipation Pd of 520W at 25°C
                      • Operating junction temperature range from -55°C to 175°C

                      Technical Specifications

                      Channel Type

                      N Channel

                      Drain Source Voltage Vds

                      200V

                      Drain Source On State Resistance

                      0.008ohm

                      Transistor Case Style

                      TO-247AC

                      Power Dissipation Pd

                      520W

                      Gate Source Threshold Voltage Max

                      5V

                      No. of Pins

                      3Pins

                      Product Range

                      HEXFET Series

                      MSL

                      -

                      Transistor Polarity

                      N Channel

                      Continuous Drain Current Id

                      130A

                      On Resistance Rds(on)

                      0.008ohm

                      Transistor Mounting

                      Through Hole

                      Rds(on) Test Voltage

                      30V

                      Power Dissipation

                      520W

                      Operating Temperature Max

                      175°C

                      Qualification

                      -

                      SVHC

                      No SVHC (21-Jan-2025)

                      Technical Docs (2)

                      Technical Data Sheet EN

                      Simulation Model EN

                      Associated Products

                      5 Products Found

                      Legislation and Environmental

                      US ECCN:EAR99
                      EU ECCN:Unknown
                      RoHS Compliant:Yes

                      RoHS

                      RoHS Phthalates Compliant:Yes

                      RoHS

                      SVHC:No SVHC (21-Jan-2025)
                      Download Product Compliance Certificate

                      Product Compliance Certificate

                      Product traceability

                      Date/Lot Code

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