Print Page
IRFR3607TRPBF
Power MOSFET, N Channel, 75 V, 56 A, 0.009 ohm, TO-252 (DPAK), Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoIRFR3607TRPBF
Newark Part No.25R3336
Also Known AsSP001567010
Technical Datasheet
3,618 In Stock
Need more?
Same day shipping
Order before 9pm EST standard shipping
Available in quantity shown. To order more than shown inventory, contact sales
| Quantity | Price |
|---|---|
| 1+ | $0.871 |
| 10+ | $0.871 |
| 25+ | $0.871 |
| 50+ | $0.871 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$0.87
Enter Your Part No/Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerINFINEON
Manufacturer Part NoIRFR3607TRPBF
Newark Part No.25R3336
Also Known AsSP001567010
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds75V
Continuous Drain Current Id56A
On Resistance Rds(on)0.00734ohm
Drain Source On State Resistance0.009ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Power Dissipation Pd140W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2V
Power Dissipation140W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
SVHCNo SVHC (21-Jan-2025)
Alternatives for IRFR3607TRPBF
1 Product Found
Product Overview
The IRFR3607TRPBF is a HEXFET® single N-channel Power MOSFET offers fully characterized capacitance and avalanche SOA. It is suitable for high efficiency synchronous rectification in SMPS, hard switched and high frequency circuits.
- Improved gate, avalanche and dynamic dV/dt ruggedness
- Enhanced body diode dV/dt and di/dt capability
Applications
Power Management, Industrial
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
75V
On Resistance Rds(on)
0.00734ohm
Transistor Case Style
TO-252 (DPAK)
Power Dissipation Pd
140W
Gate Source Threshold Voltage Max
2V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
56A
Drain Source On State Resistance
0.009ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Power Dissipation
140W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (1)
Associated Products
6 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate