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| Quantity | Price |
|---|---|
| 1+ | $2.660 |
| 10+ | $2.660 |
| 25+ | $2.660 |
| 50+ | $2.660 |
| 100+ | $2.440 |
| 250+ | $2.260 |
| 500+ | $1.960 |
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Multiple: 1
$2.66
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Product Information
ManufacturerINFINEON
Manufacturer Part NoIRFS7730TRLPBF
Newark Part No.34AC1760
Product RangeHEXFET
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds75V
Continuous Drain Current Id195A
On Resistance Rds(on)0.0022ohm
Drain Source On State Resistance0.0026ohm
Transistor Case StyleTO-263AB
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3.7V
Power Dissipation375W
Power Dissipation Pd375W
No. of Pins3Pins
Operating Temperature Max175°C
Product RangeHEXFET
Qualification-
Alternatives for IRFS7730TRLPBF
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Product Overview
HEXFET® Power MOSFET suitable for use in brushed motor drive applications, BLDC motor drive applications, battery powered circuits, half-bridge and full-bridge topologies, synchronous rectifier applications, resonant mode power supplies, OR-ing and redundant power switches, DC/DC and AC/DC converters, DC/AC inverters.
- Improved gate, avalanche and dynamic dV/dt ruggedness
- Fully characterized capacitance and avalanche SOA
- Enhanced body diode dV/dt and dI/dt capability
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
75V
On Resistance Rds(on)
0.0022ohm
Transistor Case Style
TO-263AB
Rds(on) Test Voltage
10V
Power Dissipation
375W
No. of Pins
3Pins
Product Range
HEXFET
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
195A
Drain Source On State Resistance
0.0026ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3.7V
Power Dissipation Pd
375W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (1)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate