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100+ | $0.494 |
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Product Information
ManufacturerINFINEON
Manufacturer Part NoIRFU120NPBF
Newark Part No.38K2655
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id9.4A
On Resistance Rds(on)0.21ohm
Drain Source On State Resistance0.21ohm
Transistor Case StyleTO-251AA
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation48W
Power Dissipation Pd48W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
MSL-
Product Overview
Single N-channel power MOSFET in a I-Pak package. It utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.
- Advanced process technology
- Fast switching
- Fully avalanche rated
- Planar cell structure for wide SOA
- Product qualification according to JEDEC standard
- Increased ruggedness
- High performance in low frequency applications
- Standard pinout allows for drop in replacement
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
100V
On Resistance Rds(on)
0.21ohm
Transistor Case Style
TO-251AA
Rds(on) Test Voltage
10V
Power Dissipation
48W
No. of Pins
3Pins
Product Range
-
MSL
-
Transistor Polarity
N Channel
Continuous Drain Current Id
9.4A
Drain Source On State Resistance
0.21ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
4V
Power Dissipation Pd
48W
Operating Temperature Max
175°C
Qualification
-
SVHC
Lead (21-Jan-2025)
Technical Docs (2)
Associated Products
2 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate