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IRFZ34NPBF
Power MOSFET, N Channel, 55 V, 29 A, 0.04 ohm, TO-220AB, Through Hole
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| Quantity | Price |
|---|---|
| 1+ | $0.498 |
| 10+ | $0.457 |
| 100+ | $0.457 |
| 500+ | $0.457 |
| 1000+ | $0.457 |
| 4000+ | $0.422 |
| 10000+ | $0.422 |
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Product Information
ManufacturerINFINEON
Manufacturer Part NoIRFZ34NPBF
Newark Part No.63J7120
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds55V
Continuous Drain Current Id29A
Drain Source On State Resistance0.04ohm
On Resistance Rds(on)0.04ohm
Transistor Case StyleTO-220AB
Transistor MountingThrough Hole
Power Dissipation Pd56W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation56W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (21-Jan-2025)
Product Overview
The IRFZ34NPBF is a 55V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology.
- 175°C Operating temperature
- Dynamic dV/dt rating
- Fully avalanche rated
Applications
Power Management
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
55V
Drain Source On State Resistance
0.04ohm
Transistor Case Style
TO-220AB
Power Dissipation Pd
56W
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
MSL
-
Channel Type
N Channel
Continuous Drain Current Id
29A
On Resistance Rds(on)
0.04ohm
Transistor Mounting
Through Hole
Rds(on) Test Voltage
10V
Power Dissipation
56W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate