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IRL3705ZPBF
MOSFET, N-CH, 55V, 86A, TO-220AB
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| Quantity | Price |
|---|---|
| 1+ | $1.550 |
Price for:Each
Minimum: 1
Multiple: 1
$1.55
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Product Information
ManufacturerINFINEON
Manufacturer Part NoIRL3705ZPBF
Newark Part No.38K3059
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds55V
Continuous Drain Current Id86A
Drain Source On State Resistance8000µohm
On Resistance Rds(on)0.008ohm
Transistor Case StyleTO-220AB
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Power Dissipation Pd130W
Gate Source Threshold Voltage Max3V
Power Dissipation130W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (23-Jan-2024)
Product Overview
The IRL3705ZPBF is a HEXFET® N-channel Power MOSFET utilizes the latest processing techniques to achieve extremely low ON-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
- Logic level
- Advanced process technology
- Repetitive avalanche allowed up to Tjmax
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
55V
Drain Source On State Resistance
8000µohm
Transistor Case Style
TO-220AB
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
3V
No. of Pins
3Pins
Product Range
-
MSL
-
Channel Type
N Channel
Continuous Drain Current Id
86A
On Resistance Rds(on)
0.008ohm
Transistor Mounting
Through Hole
Power Dissipation Pd
130W
Power Dissipation
130W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (23-Jan-2024)
Associated Products
4 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (23-Jan-2024)
Download Product Compliance Certificate
Product Compliance Certificate