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| Quantity | Price |
|---|---|
| 1+ | $6.160 |
| 10+ | $4.660 |
| 25+ | $4.270 |
| 50+ | $3.900 |
| 100+ | $3.510 |
| 250+ | $3.270 |
| 500+ | $3.020 |
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Multiple: 1
$6.16
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Product Information
ManufacturerINFINEON
Manufacturer Part NoIRLB3036PBF
Newark Part No.80P4466
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id165A
Drain Source On State Resistance2400µohm
On Resistance Rds(on)0.0019ohm
Transistor Case StyleTO-220AB
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.5V
Power Dissipation380W
Power Dissipation Pd380W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (21-Jan-2025)
Product Overview
The IRLB3036PBF is a HEXFET® single N-channel Power MOSFET offers improved gate, avalanche and dynamic dV/dt ruggedness. It is suitable for high efficiency synchronous rectification in SMPS, hard switched and high frequency circuits. It is optimized for logic level drive.
- Fully characterized capacitance and avalanche SOA
- Enhanced body diode dV/dt and di/dt capability
- Very low RDS (ON) at 4.5V VGS
- Logic level
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
60V
Drain Source On State Resistance
2400µohm
Transistor Case Style
TO-220AB
Rds(on) Test Voltage
10V
Power Dissipation
380W
No. of Pins
3Pins
Product Range
-
MSL
-
Channel Type
N Channel
Continuous Drain Current Id
165A
On Resistance Rds(on)
0.0019ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
2.5V
Power Dissipation Pd
380W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (3)
Associated Products
2 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability