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| Quantity | Price |
|---|---|
| 1+ | $0.751 |
| 10+ | $0.469 |
| 25+ | $0.392 |
| 50+ | $0.315 |
| 100+ | $0.238 |
| 250+ | $0.237 |
| 500+ | $0.234 |
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Multiple: 5
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Product Information
ManufacturerINFINEON
Manufacturer Part NoIRLHS6242TRPBF
Newark Part No.99AC3987
Product RangeHEXFET
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id22A
Drain Source On State Resistance0.0094ohm
On Resistance Rds(on)0.0094ohm
Transistor Case StyleDFN2020
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Power Dissipation Pd9.6W
Gate Source Threshold Voltage Max800mV
Power Dissipation9.6W
No. of Pins8Pins
Operating Temperature Max150°C
Product RangeHEXFET
Qualification-
MSLMSL 2 - 1 year
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
20V
Drain Source On State Resistance
0.0094ohm
Transistor Case Style
DFN2020
Rds(on) Test Voltage
4.5V
Gate Source Threshold Voltage Max
800mV
No. of Pins
8Pins
Product Range
HEXFET
MSL
MSL 2 - 1 year
Channel Type
N Channel
Continuous Drain Current Id
22A
On Resistance Rds(on)
0.0094ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
9.6W
Power Dissipation
9.6W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (3)
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Associated Products
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability