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Product Information
ManufacturerINFINEON
Manufacturer Part NoIRLML2502PBF
Newark Part No.97K2351
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id4.2A
Drain Source On State Resistance0.045ohm
On Resistance Rds(on)0.045ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Power Dissipation Pd1.25W
Gate Source Threshold Voltage Max1.2V
Power Dissipation1.25W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
Product Overview
The IRLML2502PBF is 20V single N channel HEXFET power MOSFET in Micro3 (SOT-23) package. This MOSFET features extremely low on resistance per silicon area, ruggedness, fast switching as a result, power MOSFET are well know to provide extremely efficiency and reliability which can be used in wide variety of applications.
- Drain to source voltage (Vds) of 20V
- Gate to source voltage of ±12V
- On resistance Rds(on) of 35mohm at Vgs 4.5V
- Power dissipation Pd of 1.25W at 25°C
- Continuous drain current Id of 4.2A at vgs 4.5V and 25°C
- Operating junction temperature range from -55°C to 150°C
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
20V
Drain Source On State Resistance
0.045ohm
Transistor Case Style
SOT-23
Rds(on) Test Voltage
4.5V
Gate Source Threshold Voltage Max
1.2V
No. of Pins
3Pins
Product Range
-
MSL
-
Channel Type
N Channel
Continuous Drain Current Id
4.2A
On Resistance Rds(on)
0.045ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
1.25W
Power Dissipation
1.25W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (1)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
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