Print Page
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoSPA20N60C3XKSA1.
Newark Part No.26AC3952
Also Known AsSPA20N60C3, SP000216354
Technical Datasheet
41,859 In Stock
Need more?
Delivery in 2-4 Business Days
Need more?
Quantity | Price |
---|---|
50+ | $3.200 |
100+ | $3.050 |
250+ | $2.980 |
500+ | $2.900 |
Price for:Each
Minimum: 50
Multiple: 1
$160.00
Enter Your Part No/Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerINFINEON
Manufacturer Part NoSPA20N60C3XKSA1.
Newark Part No.26AC3952
Also Known AsSPA20N60C3, SP000216354
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds650V
Continuous Drain Current Id20.7A
On Resistance Rds(on)0.16ohm
Drain Source On State Resistance0.16ohm
Transistor MountingThrough Hole
Power Dissipation Pd34.5W
Rds(on) Test Voltage10V
Transistor Case StyleTO-220FP
Gate Source Threshold Voltage Max3V
Power Dissipation34.5W
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product Range-
MSL-
Product Overview
The SPA20N60C3 is a 650V N-channel CoolMOS™ Power MOSFET with low specific on-state resistance. The CoolMOS™ MOSFET offers a significant reduction of conduction, switching and driving losses and enable high power density and efficiency for superior power conversion systems. The latest state-of-the-art generation of high voltage power MOSFETs makes AC-DC power supplies more efficient, more compact, lighter and cooler than ever before.
- Very low energy storage in output capacitance (Eoss) at 400V
- Low gate charge (Qg)
- High efficiency and power density
- Outstanding performance
- High reliability
- Easy to use
Applications
Computers & Computer Peripherals, Communications & Networking, Consumer Electronics, Power Management
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
650V
On Resistance Rds(on)
0.16ohm
Transistor Mounting
Through Hole
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
3V
No. of Pins
3Pins
Qualification
-
MSL
-
Transistor Polarity
N Channel
Continuous Drain Current Id
20.7A
Drain Source On State Resistance
0.16ohm
Power Dissipation Pd
34.5W
Transistor Case Style
TO-220FP
Power Dissipation
34.5W
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
Associated Products
5 Products Found
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate