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SPD02N80C3ATMA1
Power MOSFET, N Channel, 800 V, 2 A, 2.7 ohm, TO-252 (DPAK), Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoSPD02N80C3ATMA1
Newark Part No.33P8203
Also Known AsSPD02N80C3, SP001117754
Technical Datasheet
Packaging Options
Available to Order
Manufacturer Standard Lead Time: 22 week(s)
| Quantity | Price |
|---|---|
| 1+ | $1.320 |
| 10+ | $0.985 |
| 25+ | $0.940 |
| 50+ | $0.896 |
| 100+ | $0.851 |
| 250+ | $0.762 |
| 500+ | $0.673 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$1.32
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Product Information
ManufacturerINFINEON
Manufacturer Part NoSPD02N80C3ATMA1
Newark Part No.33P8203
Also Known AsSPD02N80C3, SP001117754
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds800V
Continuous Drain Current Id2A
On Resistance Rds(on)2.4ohm
Drain Source On State Resistance2.7ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd42W
Gate Source Threshold Voltage Max3V
Power Dissipation42W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
Product Overview
The SPD02N80C3 is a 800V CoolMOS™ N-channel Power MOSFET features ultra-low gate current. It is suitable for PC power, solar and adapter applications.
- New revolutionary high voltage technology
- Extreme dV/dt rated
- Low specific ON-state resistance
- Qualified according to JEDEC for target applications
- Very low energy storage in output capacitance (Eoss)@400V
- Field proven CoolMOS™ quality
- Periodic avalanche rated
- High efficiency and power density
- Outstanding performance
- High reliability
- Ease of use
Applications
Industrial, Consumer Electronics, Power Management, Lighting, Alternative Energy
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
2A
Drain Source On State Resistance
2.7ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
42W
Power Dissipation
42W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Drain Source Voltage Vds
800V
On Resistance Rds(on)
2.4ohm
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
3V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Alternatives for SPD02N80C3ATMA1
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability