Print Page
SPD07N60C3ATMA1
Power MOSFET, N Channel, 650 V, 7.3 A, 0.6 ohm, TO-252 (DPAK), Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoSPD07N60C3ATMA1
Newark Part No.33P8209
Also Known AsSPD07N60C3, SP001117774
Technical Datasheet
2,533 In Stock
Need more?
Delivery in 2-4 Business Days(UK stock)
Order before 9pm EST standard shipping
| Quantity | Price |
|---|---|
| 1+ | $3.730 |
| 10+ | $2.380 |
| 25+ | $2.100 |
| 50+ | $1.840 |
| 100+ | $1.560 |
| 250+ | $1.550 |
| 500+ | $1.550 |
| 1000+ | $1.530 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$3.73
Enter Your Part No/Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerINFINEON
Manufacturer Part NoSPD07N60C3ATMA1
Newark Part No.33P8209
Also Known AsSPD07N60C3, SP001117774
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds650V
Continuous Drain Current Id7.3A
Drain Source On State Resistance0.6ohm
On Resistance Rds(on)0.54ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd83W
Gate Source Threshold Voltage Max3V
Power Dissipation83W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (21-Jan-2025)
Product Overview
The SPD07N60C3 is a 650V CoolMOS™ N-channel Power MOSFET features ultra-low gate current. It is suitable for server, telecom, PC power and adapter applications.
- New revolutionary high voltage technology
- Extreme dV/dt rated
- High peak current capability
- Qualified according to JEDEC for target applications
- Improved transconductance
- Periodic avalanche rated
- Low specific ON-state resistance
- Very low energy storage in output capacitance (Eoss)@400V
- Field proven CoolMOS™ quality
- High efficiency and power density
- Outstanding performance
- High reliability
- Ease of use
Applications
Industrial, Communications & Networking, Consumer Electronics, Power Management
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
650V
Drain Source On State Resistance
0.6ohm
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
3V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
7.3A
On Resistance Rds(on)
0.54ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
83W
Power Dissipation
83W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
Alternatives for SPD07N60C3ATMA1
1 Product Found
Associated Products
4 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability