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IXZ2210N50L
RF FET Transistor, 500 V, 10 A, 360 W, 175 MHz
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No Longer Available
Product Information
ManufacturerIXYS RF
Manufacturer Part NoIXZ2210N50L
Newark Part No.42M1939
Technical Datasheet
Drain Source Voltage Vds500V
Continuous Drain Current Id10A
Power Dissipation360W
Operating Frequency Min-
Power Dissipation Pd360W
Operating Frequency Max175MHz
Transistor Case StyleSMD
No. of Pins8Pins
RF Transistor Case-
Operating Temperature Max175°C
Channel TypeN Channel
Transistor MountingSurface Mount
Product Range-
MSL-
SVHCNo SVHC (12-Jan-2017)
Technical Specifications
Drain Source Voltage Vds
500V
Power Dissipation
360W
Power Dissipation Pd
360W
Transistor Case Style
SMD
RF Transistor Case
-
Channel Type
N Channel
Product Range
-
SVHC
No SVHC (12-Jan-2017)
Continuous Drain Current Id
10A
Operating Frequency Min
-
Operating Frequency Max
175MHz
No. of Pins
8Pins
Operating Temperature Max
175°C
Transistor Mounting
Surface Mount
MSL
-
Technical Docs (1)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
SVHC:No SVHC (12-Jan-2017)
Download Product Compliance Certificate
Product Compliance Certificate