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IXFN82N60P
Bipolar (BJT) Single Transistor, N Channel, 72 A, 600 V, 0.075 ohm, 10 V, 5 V SOT-227B
Image is for illustrative purposes only. Please refer to product description.
ManufacturerIXYS SEMICONDUCTOR
Manufacturer Part NoIXFN82N60P
Newark Part No.58Y5889
Product RangePolar HiPerFET Series
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 28 week(s)
Product Information
ManufacturerIXYS SEMICONDUCTOR
Manufacturer Part NoIXFN82N60P
Newark Part No.58Y5889
Product RangePolar HiPerFET Series
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Continuous Drain Current Id72A
Drain Source Voltage Vds600V
Drain Source On State Resistance0.075ohm
On Resistance Rds(on)0.075ohm
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max5V
Power Dissipation Pd1.04kW
Power Dissipation1.04kW
Operating Temperature Max150°C
Product RangePolar HiPerFET Series
SVHCNo SVHC (17-Jan-2023)
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
72A
Drain Source On State Resistance
0.075ohm
Rds(on) Test Voltage
10V
Power Dissipation Pd
1.04kW
Operating Temperature Max
150°C
SVHC
No SVHC (17-Jan-2023)
Transistor Polarity
N Channel
Drain Source Voltage Vds
600V
On Resistance Rds(on)
0.075ohm
Gate Source Threshold Voltage Max
5V
Power Dissipation
1.04kW
Product Range
Polar HiPerFET Series
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (17-Jan-2023)
Download Product Compliance Certificate
Product Compliance Certificate