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IXFN38N100P
Bipolar (BJT) Single Transistor, N Channel, 38 A, 1 kV, 0.21 ohm, 10 V, 6.5 V
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ManufacturerLITTELFUSE
Manufacturer Part NoIXFN38N100P
Newark Part No.03AH0752
Product RangePolar/ HiperFET Series
Technical Datasheet
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| Quantity | Price |
|---|---|
| 1+ | $59.550 |
| 5+ | $55.300 |
| 10+ | $50.430 |
| 25+ | $49.430 |
| 50+ | $48.420 |
| 100+ | $47.420 |
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Product Information
ManufacturerLITTELFUSE
Manufacturer Part NoIXFN38N100P
Newark Part No.03AH0752
Product RangePolar/ HiperFET Series
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Continuous Drain Current Id38A
Drain Source Voltage Vds1kV
Drain Source On State Resistance0.21ohm
On Resistance Rds(on)0.21ohm
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max6.5V
Power Dissipation Pd1kW
Power Dissipation1kW
Operating Temperature Max150°C
Product RangePolar/ HiperFET Series
SVHCTo Be Advised
Product Overview
N-channel enhancement mode fast intrinsic rectifier suitable for use in DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, AC motor control, high speed power switching application.
- Polar™ HiperFET™ power MOSFET
- Low intrinsic gate resistance
- miniBLOC with aluminium nitride isolation
- Low package inductance
- Low RDS(on) and QG
- High power density
- Easy to mount
- Space savings
Technical Specifications
Transistor Polarity
N Channel
Continuous Drain Current Id
38A
Drain Source On State Resistance
0.21ohm
Rds(on) Test Voltage
10V
Power Dissipation Pd
1kW
Operating Temperature Max
150°C
SVHC
To Be Advised
Channel Type
N Channel
Drain Source Voltage Vds
1kV
On Resistance Rds(on)
0.21ohm
Gate Source Threshold Voltage Max
6.5V
Power Dissipation
1kW
Product Range
Polar/ HiperFET Series
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability