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MG06300D-BN4MM
IGBT Module, Dual [Half Bridge], 400 A, 1.45 V, 940 W, 150 °C, Module
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Available to Order
Manufacturer Standard Lead Time: 12 week(s)
Product Information
ManufacturerLITTELFUSE
Manufacturer Part NoMG06300D-BN4MM
Newark Part No.31Y2577
Technical Datasheet
IGBT ConfigurationDual [Half Bridge]
Transistor PolarityDual NPN
DC Collector Current400A
Continuous Collector Current400A
Collector Emitter Saturation Voltage Vce(on)1.45V
Collector Emitter Saturation Voltage1.45V
Power Dissipation940W
Power Dissipation Pd940W
Collector Emitter Voltage V(br)ceo600V
Operating Temperature Max150°C
Junction Temperature, Tj Max150°C
Transistor Case StyleModule
No. of Pins7Pins
IGBT TerminationStud
Collector Emitter Voltage Max600V
IGBT Technology-
Transistor MountingPanel
Product Range-
SVHCTo Be Advised
Technical Specifications
IGBT Configuration
Dual [Half Bridge]
DC Collector Current
400A
Collector Emitter Saturation Voltage Vce(on)
1.45V
Power Dissipation
940W
Collector Emitter Voltage V(br)ceo
600V
Junction Temperature, Tj Max
150°C
No. of Pins
7Pins
Collector Emitter Voltage Max
600V
Transistor Mounting
Panel
SVHC
To Be Advised
Transistor Polarity
Dual NPN
Continuous Collector Current
400A
Collector Emitter Saturation Voltage
1.45V
Power Dissipation Pd
940W
Operating Temperature Max
150°C
Transistor Case Style
Module
IGBT Termination
Stud
IGBT Technology
-
Product Range
-
Technical Docs (2)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate