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MG06300D-BN4MM
IGBT Module, Dual [Half Bridge], 400 A, 1.45 V, 940 W, 150 °C, Module
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Disponible sur commande
Délais d’approvisionnement standard du fabricant : 12 semaine(s)
Informations produit
FabricantLITTELFUSE
Réf. FabricantMG06300D-BN4MM
Code Commande31Y2577
Fiche technique
IGBT ConfigurationDual [Half Bridge]
Transistor PolarityDual NPN
DC Collector Current400A
Continuous Collector Current400A
Collector Emitter Saturation Voltage Vce(on)1.45V
Collector Emitter Saturation Voltage1.45V
Power Dissipation940W
Power Dissipation Pd940W
Collector Emitter Voltage V(br)ceo600V
Operating Temperature Max150°C
Junction Temperature, Tj Max150°C
Transistor Case StyleModule
No. of Pins7Pins
IGBT TerminationStud
Collector Emitter Voltage Max600V
IGBT Technology-
Transistor MountingPanel
Product Range-
SVHCTo Be Advised
Spécifications techniques
IGBT Configuration
Dual [Half Bridge]
DC Collector Current
400A
Collector Emitter Saturation Voltage Vce(on)
1.45V
Power Dissipation
940W
Collector Emitter Voltage V(br)ceo
600V
Junction Temperature, Tj Max
150°C
No. of Pins
7Pins
Collector Emitter Voltage Max
600V
Transistor Mounting
Panel
SVHC
To Be Advised
Transistor Polarity
Dual NPN
Continuous Collector Current
400A
Collector Emitter Saturation Voltage
1.45V
Power Dissipation Pd
940W
Operating Temperature Max
150°C
Transistor Case Style
Module
IGBT Termination
Stud
IGBT Technology
-
Product Range
-
Documents techniques (2)
Législation et Questions environnementales
US ECCN:Unknown
EU ECCN:Unknown
Conforme RoHS :Oui
RoHS
Conforme à la norme RoHS Phthalates:Oui
RoHS
SVHC :To Be Advised
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Certificat de conformité du produit