Print Page
Image is for illustrative purposes only. Please refer to product description.
ManufacturerMICRON
Manufacturer Part NoMT47H128M16RT-25E AIT:C
Newark Part No.80AH8117
Technical Datasheet
355 In Stock
Need more?
Same day shipping
Order before 9pm EST standard shipping
Quantity | Price |
---|---|
1+ | $19.040 |
10+ | $19.040 |
25+ | $19.040 |
50+ | $19.040 |
100+ | $17.680 |
250+ | $17.680 |
Price for:Each
Minimum: 1
Multiple: 1
$19.04
Enter Your Part No/Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerMICRON
Manufacturer Part NoMT47H128M16RT-25E AIT:C
Newark Part No.80AH8117
Technical Datasheet
DRAM TypeDDR2
DRAM Density2Gbit
Memory Density2Gbit
DRAM Memory Configuration128M x 16bit
Memory Configuration128M x 16bit
Clock Frequency400MHz
Clock Frequency Max400MHz
Memory Case StyleFBGA
IC Case / PackageFBGA
No. of Pins84Pins
Supply Voltage Nom1.8V
Access Time2.5ns
IC MountingSurface Mount
Operating Temperature Min-40°C
Operating Temperature Max95°C
Product Range-
SVHCNo SVHC (17-Jan-2023)
Product Overview
MT47H128M16RT-25E AIT:C is a DDR2 SDRAM. It uses a double data rate architecture to achieve high-speed operation. The double data rate architecture is essentially for 4n-prefetch architecture, with an interface designed to transfer two data words per clock cycle at the I/O balls. A single read or write access for the DDR2 SDRAM effectively consists of a single 4n-bit-wide, one-clock-cycle data transfer at the internal DRAM core and four corresponding n-bitwide, one-half-clock-cycle data transfers at the I/O balls.
- Operating voltage range is 1.0V to 2.3V (VSS)
- 128Meg x 16 configuration, AEC-Q100- qualified
- Packaging style is 84-ball 9mm x 12.5mm FBGA
- Timing (cycle time) is 2.5ns at CL = 5 (DDR2-800)
- Posted CAS additive latency (AL)
- Data rate is 800MT/s, differential data strobe (DQS, DQS#) option
- DLL to align DQ and DQS transitions with CK, duplicate output strobe (RDQS) option for x8
- Programmable CAS latency (CL)
- On-die termination (ODT), supports JEDEC clock jitter specification
- JEDEC-standard 1.8V I/O (SSTL_18-compatible), 8D response time
Technical Specifications
DRAM Type
DDR2
Memory Density
2Gbit
Memory Configuration
128M x 16bit
Clock Frequency Max
400MHz
IC Case / Package
FBGA
Supply Voltage Nom
1.8V
IC Mounting
Surface Mount
Operating Temperature Max
95°C
SVHC
No SVHC (17-Jan-2023)
DRAM Density
2Gbit
DRAM Memory Configuration
128M x 16bit
Clock Frequency
400MHz
Memory Case Style
FBGA
No. of Pins
84Pins
Access Time
2.5ns
Operating Temperature Min
-40°C
Product Range
-
Technical Docs (1)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (17-Jan-2023)
Download Product Compliance Certificate
Product Compliance Certificate