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CM100BU-12H
IGBT Module, H Bridge, 100 A, 600 V, 400 W, 150 °C, Module
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ManufacturerMITSUBISHI ELECTRIC
Manufacturer Part NoCM100BU-12H
Newark Part No.09B2199
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 20 week(s)
Product Information
ManufacturerMITSUBISHI ELECTRIC
Manufacturer Part NoCM100BU-12H
Newark Part No.09B2199
Technical Datasheet
Transistor PolarityN Channel
IGBT ConfigurationH Bridge
DC Collector Current100A
Continuous Collector Current100A
Collector Emitter Saturation Voltage600V
Collector Emitter Saturation Voltage Vce(on)600V
Power Dissipation Pd400W
Power Dissipation400W
Operating Temperature Max150°C
Junction Temperature, Tj Max150°C
Collector Emitter Voltage V(br)ceo600V
Transistor Case StyleModule
No. of Pins4Pins
IGBT TerminationStud
Collector Emitter Voltage Max600V
IGBT Technology-
Transistor MountingPanel
Product Range-
SVHCTo Be Advised
Technical Specifications
Transistor Polarity
N Channel
DC Collector Current
100A
Collector Emitter Saturation Voltage
600V
Power Dissipation Pd
400W
Operating Temperature Max
150°C
Collector Emitter Voltage V(br)ceo
600V
No. of Pins
4Pins
Collector Emitter Voltage Max
600V
Transistor Mounting
Panel
SVHC
To Be Advised
IGBT Configuration
H Bridge
Continuous Collector Current
100A
Collector Emitter Saturation Voltage Vce(on)
600V
Power Dissipation
400W
Junction Temperature, Tj Max
150°C
Transistor Case Style
Module
IGBT Termination
Stud
IGBT Technology
-
Product Range
-
Technical Docs (1)
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Associated Products
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Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:No
RoHS Phthalates Compliant:No
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate