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CM100DU-12F
IGBT Module, Dual [Half Bridge], 100 A, 2.2 V, 350 W, 150 °C, Module
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ManufacturerMITSUBISHI ELECTRIC
Manufacturer Part NoCM100DU-12F
Newark Part No.95B1828
Product RangeF Series
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 28 week(s)
Product Information
ManufacturerMITSUBISHI ELECTRIC
Manufacturer Part NoCM100DU-12F
Newark Part No.95B1828
Product RangeF Series
Technical Datasheet
IGBT ConfigurationDual [Half Bridge]
Transistor PolarityN Channel
Continuous Collector Current100A
DC Collector Current100A
Collector Emitter Saturation Voltage Vce(on)600V
Collector Emitter Saturation Voltage2.2V
Power Dissipation350W
Power Dissipation Pd350W
Collector Emitter Voltage V(br)ceo600V
Junction Temperature, Tj Max150°C
Operating Temperature Max150°C
Transistor Case StyleModule
No. of Pins7Pins
IGBT TerminationStud
IGBT TechnologyIGBT 5 [Trench Gate]
Collector Emitter Voltage Max600V
Transistor MountingPanel
Product RangeF Series
SVHCTo Be Advised
Product Overview
The CM100DU-12F is a dual Trench gate design IGBTMOD™ Module designed for use in switching applications. It consists of two IGBT transistors in a half-bridge configuration with each transistor having a reverse-connected super-fast recovery freewheel diode. All components and interconnects are isolated from the heat sinking base plate, offering simplified system assembly and thermal management.
- Low drive power
- Low collector-to-emitter saturation voltage
- Discrete super-fast recovery free-wheel diode
- Isolated base plate for easy heat sinking
Applications
Motor Drive & Control, Power Management
Technical Specifications
IGBT Configuration
Dual [Half Bridge]
Continuous Collector Current
100A
Collector Emitter Saturation Voltage Vce(on)
600V
Power Dissipation
350W
Collector Emitter Voltage V(br)ceo
600V
Operating Temperature Max
150°C
No. of Pins
7Pins
IGBT Technology
IGBT 5 [Trench Gate]
Transistor Mounting
Panel
SVHC
To Be Advised
Transistor Polarity
N Channel
DC Collector Current
100A
Collector Emitter Saturation Voltage
2.2V
Power Dissipation Pd
350W
Junction Temperature, Tj Max
150°C
Transistor Case Style
Module
IGBT Termination
Stud
Collector Emitter Voltage Max
600V
Product Range
F Series
Technical Docs (1)
Alternatives for CM100DU-12F
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Associated Products
1 Product Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:No
RoHS Phthalates Compliant:No
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate