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CM100DU-12F
IGBT Module, Dual [Half Bridge], 100 A, 2.2 V, 350 W, 150 °C, Module
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FabricantMITSUBISHI ELECTRIC
Réf. FabricantCM100DU-12F
Code Commande95B1828
Gamme de produitF Series
Fiche technique
Disponible sur commande
Délais d’approvisionnement standard du fabricant : 28 semaine(s)
Informations produit
FabricantMITSUBISHI ELECTRIC
Réf. FabricantCM100DU-12F
Code Commande95B1828
Gamme de produitF Series
Fiche technique
IGBT ConfigurationDual [Half Bridge]
Transistor PolarityN Channel
DC Collector Current100A
Continuous Collector Current100A
Collector Emitter Saturation Voltage2.2V
Collector Emitter Saturation Voltage Vce(on)600V
Power Dissipation Pd350W
Power Dissipation350W
Junction Temperature, Tj Max150°C
Collector Emitter Voltage V(br)ceo600V
Operating Temperature Max150°C
Transistor Case StyleModule
No. of Pins7Pins
IGBT TerminationStud
Collector Emitter Voltage Max600V
IGBT TechnologyIGBT 5 [Trench Gate]
Transistor MountingPanel
Product RangeF Series
SVHCTo Be Advised
Aperçu du produit
The CM100DU-12F is a dual Trench gate design IGBTMOD™ Module designed for use in switching applications. It consists of two IGBT transistors in a half-bridge configuration with each transistor having a reverse-connected super-fast recovery freewheel diode. All components and interconnects are isolated from the heat sinking base plate, offering simplified system assembly and thermal management.
- Low drive power
- Low collector-to-emitter saturation voltage
- Discrete super-fast recovery free-wheel diode
- Isolated base plate for easy heat sinking
Applications
Motor Drive & Control, Power Management
Spécifications techniques
IGBT Configuration
Dual [Half Bridge]
DC Collector Current
100A
Collector Emitter Saturation Voltage
2.2V
Power Dissipation Pd
350W
Junction Temperature, Tj Max
150°C
Operating Temperature Max
150°C
No. of Pins
7Pins
Collector Emitter Voltage Max
600V
Transistor Mounting
Panel
SVHC
To Be Advised
Transistor Polarity
N Channel
Continuous Collector Current
100A
Collector Emitter Saturation Voltage Vce(on)
600V
Power Dissipation
350W
Collector Emitter Voltage V(br)ceo
600V
Transistor Case Style
Module
IGBT Termination
Stud
IGBT Technology
IGBT 5 [Trench Gate]
Product Range
F Series
Documents techniques (1)
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Législation et Questions environnementales
US ECCN:EAR99
EU ECCN:Unknown
Conforme RoHS :Non
Conforme à la norme RoHS Phthalates:Non
SVHC :To Be Advised
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Certificat de conformité du produit