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CM100DU-12H
IGBT Module, Dual [Half Bridge], 100 A, 600 V, 400 W, 150 °C, Module
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ManufacturerMITSUBISHI ELECTRIC
Manufacturer Part NoCM100DU-12H
Newark Part No.48F4208
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 28 week(s)
Product Information
ManufacturerMITSUBISHI ELECTRIC
Manufacturer Part NoCM100DU-12H
Newark Part No.48F4208
Technical Datasheet
IGBT ConfigurationDual [Half Bridge]
Transistor PolarityDual N Channel
DC Collector Current100A
Continuous Collector Current100A
Collector Emitter Saturation Voltage600V
Collector Emitter Saturation Voltage Vce(on)600V
Power Dissipation Pd400W
Power Dissipation400W
Collector Emitter Voltage V(br)ceo600V
Operating Temperature Max150°C
Junction Temperature, Tj Max150°C
Transistor Case StyleModule
No. of Pins7Pins
IGBT TerminationStud
Collector Emitter Voltage Max600V
IGBT Technology-
Transistor MountingPanel
Product Range-
SVHCTo Be Advised
Technical Specifications
IGBT Configuration
Dual [Half Bridge]
DC Collector Current
100A
Collector Emitter Saturation Voltage
600V
Power Dissipation Pd
400W
Collector Emitter Voltage V(br)ceo
600V
Junction Temperature, Tj Max
150°C
No. of Pins
7Pins
Collector Emitter Voltage Max
600V
Transistor Mounting
Panel
SVHC
To Be Advised
Transistor Polarity
Dual N Channel
Continuous Collector Current
100A
Collector Emitter Saturation Voltage Vce(on)
600V
Power Dissipation
400W
Operating Temperature Max
150°C
Transistor Case Style
Module
IGBT Termination
Stud
IGBT Technology
-
Product Range
-
Technical Docs (1)
Associated Products
1 Product Found
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:No
RoHS Phthalates Compliant:No
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate