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CM100DU-12H
IGBT Module, Dual [Half Bridge], 100 A, 600 V, 400 W, 150 °C, Module
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Disponible sur commande
Délais d’approvisionnement standard du fabricant : 28 semaine(s)
Informations produit
FabricantMITSUBISHI ELECTRIC
Réf. FabricantCM100DU-12H
Code Commande48F4208
Fiche technique
IGBT ConfigurationDual [Half Bridge]
Transistor PolarityDual N Channel
DC Collector Current100A
Continuous Collector Current100A
Collector Emitter Saturation Voltage600V
Collector Emitter Saturation Voltage Vce(on)600V
Power Dissipation Pd400W
Power Dissipation400W
Collector Emitter Voltage V(br)ceo600V
Operating Temperature Max150°C
Junction Temperature, Tj Max150°C
Transistor Case StyleModule
No. of Pins7Pins
IGBT TerminationStud
Collector Emitter Voltage Max600V
IGBT Technology-
Transistor MountingPanel
Product Range-
SVHCTo Be Advised
Spécifications techniques
IGBT Configuration
Dual [Half Bridge]
DC Collector Current
100A
Collector Emitter Saturation Voltage
600V
Power Dissipation Pd
400W
Collector Emitter Voltage V(br)ceo
600V
Junction Temperature, Tj Max
150°C
No. of Pins
7Pins
Collector Emitter Voltage Max
600V
Transistor Mounting
Panel
SVHC
To Be Advised
Transistor Polarity
Dual N Channel
Continuous Collector Current
100A
Collector Emitter Saturation Voltage Vce(on)
600V
Power Dissipation
400W
Operating Temperature Max
150°C
Transistor Case Style
Module
IGBT Termination
Stud
IGBT Technology
-
Product Range
-
Documents techniques (1)
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Législation et Questions environnementales
US ECCN:Unknown
EU ECCN:Unknown
Conforme RoHS :Non
Conforme à la norme RoHS Phthalates:Non
SVHC :To Be Advised
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