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CM50BU-24H
IGBT Module, H Bridge, 50 A, 2.9 V, 400 W, 150 °C, Module
Image is for illustrative purposes only. Please refer to product description.
ManufacturerMITSUBISHI ELECTRIC
Manufacturer Part NoCM50BU-24H
Newark Part No.31C0205
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 28 week(s)
Product Information
ManufacturerMITSUBISHI ELECTRIC
Manufacturer Part NoCM50BU-24H
Newark Part No.31C0205
Technical Datasheet
Transistor PolarityQuad N Channel
IGBT ConfigurationH Bridge
Continuous Collector Current50A
DC Collector Current50A
Collector Emitter Saturation Voltage Vce(on)2.9V
Collector Emitter Saturation Voltage2.9V
Power Dissipation400W
Power Dissipation Pd400W
Junction Temperature, Tj Max150°C
Collector Emitter Voltage V(br)ceo1.2kV
Operating Temperature Max150°C
Transistor Case StyleModule
No. of Pins4Pins
IGBT TerminationTab
IGBT Technology-
Collector Emitter Voltage Max1.2kV
Transistor MountingPanel
Product Range-
SVHCTo Be Advised
Technical Specifications
Transistor Polarity
Quad N Channel
Continuous Collector Current
50A
Collector Emitter Saturation Voltage Vce(on)
2.9V
Power Dissipation
400W
Junction Temperature, Tj Max
150°C
Operating Temperature Max
150°C
No. of Pins
4Pins
IGBT Technology
-
Transistor Mounting
Panel
SVHC
To Be Advised
IGBT Configuration
H Bridge
DC Collector Current
50A
Collector Emitter Saturation Voltage
2.9V
Power Dissipation Pd
400W
Collector Emitter Voltage V(br)ceo
1.2kV
Transistor Case Style
Module
IGBT Termination
Tab
Collector Emitter Voltage Max
1.2kV
Product Range
-
Technical Docs (1)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate