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CM50BU-24H
IGBT Module, H Bridge, 50 A, 2.9 V, 400 W, 150 °C, Module
L'image a des fins d'illustration uniquement. Veuillez lire la description du produit.
Disponible sur commande
Délais d’approvisionnement standard du fabricant : 28 semaine(s)
Informations produit
FabricantMITSUBISHI ELECTRIC
Réf. FabricantCM50BU-24H
Code Commande31C0205
Fiche technique
IGBT ConfigurationH Bridge
Transistor PolarityQuad N Channel
DC Collector Current50A
Continuous Collector Current50A
Collector Emitter Saturation Voltage2.9V
Collector Emitter Saturation Voltage Vce(on)2.9V
Power Dissipation Pd400W
Power Dissipation400W
Collector Emitter Voltage V(br)ceo1.2kV
Junction Temperature, Tj Max150°C
Operating Temperature Max150°C
Transistor Case StyleModule
No. of Pins4Pins
IGBT TerminationTab
IGBT Technology-
Collector Emitter Voltage Max1.2kV
Transistor MountingPanel
Product Range-
SVHCTo Be Advised
Spécifications techniques
IGBT Configuration
H Bridge
DC Collector Current
50A
Collector Emitter Saturation Voltage
2.9V
Power Dissipation Pd
400W
Collector Emitter Voltage V(br)ceo
1.2kV
Operating Temperature Max
150°C
No. of Pins
4Pins
IGBT Technology
-
Transistor Mounting
Panel
SVHC
To Be Advised
Transistor Polarity
Quad N Channel
Continuous Collector Current
50A
Collector Emitter Saturation Voltage Vce(on)
2.9V
Power Dissipation
400W
Junction Temperature, Tj Max
150°C
Transistor Case Style
Module
IGBT Termination
Tab
Collector Emitter Voltage Max
1.2kV
Product Range
-
Documents techniques (1)
Législation et Questions environnementales
US ECCN:Unknown
EU ECCN:Unknown
Conforme RoHS :Oui
RoHS
Conforme à la norme RoHS Phthalates:À déterminer
SVHC :To Be Advised
Télécharger le certificat de conformité du produit
Certificat de conformité du produit