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CM50DU-24H
IGBT Module, Dual [Half Bridge], 50 A, 2.9 V, 400 W, 150 °C, Module
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ManufacturerMITSUBISHI ELECTRIC
Manufacturer Part NoCM50DU-24H
Newark Part No.09B2229
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 28 week(s)
Product Information
ManufacturerMITSUBISHI ELECTRIC
Manufacturer Part NoCM50DU-24H
Newark Part No.09B2229
Technical Datasheet
IGBT ConfigurationDual [Half Bridge]
Transistor PolarityDual N Channel
Continuous Collector Current50A
DC Collector Current50A
Collector Emitter Saturation Voltage Vce(on)2.9V
Collector Emitter Saturation Voltage2.9V
Power Dissipation400W
Power Dissipation Pd400W
Junction Temperature, Tj Max150°C
Collector Emitter Voltage V(br)ceo1.2kV
Operating Temperature Max150°C
Transistor Case StyleModule
IGBT TerminationTab
No. of Pins7Pins
IGBT Technology-
Collector Emitter Voltage Max1.2kV
Transistor MountingPanel
Product Range-
SVHCTo Be Advised
Technical Specifications
IGBT Configuration
Dual [Half Bridge]
Continuous Collector Current
50A
Collector Emitter Saturation Voltage Vce(on)
2.9V
Power Dissipation
400W
Junction Temperature, Tj Max
150°C
Operating Temperature Max
150°C
IGBT Termination
Tab
IGBT Technology
-
Transistor Mounting
Panel
SVHC
To Be Advised
Transistor Polarity
Dual N Channel
DC Collector Current
50A
Collector Emitter Saturation Voltage
2.9V
Power Dissipation Pd
400W
Collector Emitter Voltage V(br)ceo
1.2kV
Transistor Case Style
Module
No. of Pins
7Pins
Collector Emitter Voltage Max
1.2kV
Product Range
-
Technical Docs (1)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:No
RoHS Phthalates Compliant:No
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate