Print Page
CM50DU-24H
IGBT Module, Dual [Half Bridge], 50 A, 2.9 V, 400 W, 150 °C, Module
Image is for illustrative purposes only. Please refer to product description.
ManufacturerMITSUBISHI ELECTRIC
Manufacturer Part NoCM50DU-24H
Newark Part No.09B2229
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 29 week(s)
Product Information
ManufacturerMITSUBISHI ELECTRIC
Manufacturer Part NoCM50DU-24H
Newark Part No.09B2229
Technical Datasheet
IGBT ConfigurationDual [Half Bridge]
Transistor PolarityDual N Channel
Continuous Collector Current50A
DC Collector Current50A
Collector Emitter Saturation Voltage2.9V
Collector Emitter Saturation Voltage Vce(on)2.9V
Power Dissipation Pd400W
Power Dissipation400W
Collector Emitter Voltage V(br)ceo1.2kV
Junction Temperature, Tj Max150°C
Operating Temperature Max150°C
Transistor Case StyleModule
IGBT TerminationTab
No. of Pins7Pins
IGBT Technology-
Collector Emitter Voltage Max1.2kV
Transistor MountingPanel
Product Range-
SVHCTo Be Advised
Technical Specifications
IGBT Configuration
Dual [Half Bridge]
Continuous Collector Current
50A
Collector Emitter Saturation Voltage
2.9V
Power Dissipation Pd
400W
Collector Emitter Voltage V(br)ceo
1.2kV
Operating Temperature Max
150°C
IGBT Termination
Tab
IGBT Technology
-
Transistor Mounting
Panel
SVHC
To Be Advised
Transistor Polarity
Dual N Channel
DC Collector Current
50A
Collector Emitter Saturation Voltage Vce(on)
2.9V
Power Dissipation
400W
Junction Temperature, Tj Max
150°C
Transistor Case Style
Module
No. of Pins
7Pins
Collector Emitter Voltage Max
1.2kV
Product Range
-
Technical Docs (1)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:No
RoHS Phthalates Compliant:No
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate