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CM50DU-24H
IGBT Module, Dual [Half Bridge], 50 A, 2.9 V, 400 W, 150 °C, Module
L'image a des fins d'illustration uniquement. Veuillez lire la description du produit.
Disponible sur commande
Délais d’approvisionnement standard du fabricant : 28 semaine(s)
Informations produit
FabricantMITSUBISHI ELECTRIC
Réf. FabricantCM50DU-24H
Code Commande09B2229
Fiche technique
IGBT ConfigurationDual [Half Bridge]
Transistor PolarityDual N Channel
Continuous Collector Current50A
DC Collector Current50A
Collector Emitter Saturation Voltage Vce(on)2.9V
Collector Emitter Saturation Voltage2.9V
Power Dissipation400W
Power Dissipation Pd400W
Junction Temperature, Tj Max150°C
Collector Emitter Voltage V(br)ceo1.2kV
Operating Temperature Max150°C
Transistor Case StyleModule
IGBT TerminationTab
No. of Pins7Pins
IGBT Technology-
Collector Emitter Voltage Max1.2kV
Transistor MountingPanel
Product Range-
SVHCTo Be Advised
Spécifications techniques
IGBT Configuration
Dual [Half Bridge]
Continuous Collector Current
50A
Collector Emitter Saturation Voltage Vce(on)
2.9V
Power Dissipation
400W
Junction Temperature, Tj Max
150°C
Operating Temperature Max
150°C
IGBT Termination
Tab
IGBT Technology
-
Transistor Mounting
Panel
SVHC
To Be Advised
Transistor Polarity
Dual N Channel
DC Collector Current
50A
Collector Emitter Saturation Voltage
2.9V
Power Dissipation Pd
400W
Collector Emitter Voltage V(br)ceo
1.2kV
Transistor Case Style
Module
No. of Pins
7Pins
Collector Emitter Voltage Max
1.2kV
Product Range
-
Documents techniques (1)
Législation et Questions environnementales
US ECCN:Unknown
EU ECCN:Unknown
Conforme RoHS :Non
Conforme à la norme RoHS Phthalates:Non
SVHC :To Be Advised
Télécharger le certificat de conformité du produit
Certificat de conformité du produit