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CM75BU-12H
IGBT Module, H Bridge, 75 A, 3 V, 310 W, 150 °C, Module
Image is for illustrative purposes only. Please refer to product description.
ManufacturerMITSUBISHI ELECTRIC
Manufacturer Part NoCM75BU-12H
Newark Part No.09B2243
Product RangeU- Series
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 28 week(s)
Product Information
ManufacturerMITSUBISHI ELECTRIC
Manufacturer Part NoCM75BU-12H
Newark Part No.09B2243
Product RangeU- Series
Technical Datasheet
Transistor PolarityN Channel
IGBT ConfigurationH Bridge
Continuous Collector Current75A
DC Collector Current75A
Collector Emitter Saturation Voltage Vce(on)600V
Collector Emitter Saturation Voltage3V
Power Dissipation Pd310W
Power Dissipation310W
Junction Temperature, Tj Max150°C
Operating Temperature Max150°C
Collector Emitter Voltage V(br)ceo600V
Transistor Case StyleModule
IGBT TerminationTab
No. of Pins12Pins
IGBT Technology-
Collector Emitter Voltage Max600V
Transistor MountingPanel
Product RangeU- Series
SVHCTo Be Advised
Technical Specifications
Transistor Polarity
N Channel
Continuous Collector Current
75A
Collector Emitter Saturation Voltage Vce(on)
600V
Power Dissipation Pd
310W
Junction Temperature, Tj Max
150°C
Collector Emitter Voltage V(br)ceo
600V
IGBT Termination
Tab
IGBT Technology
-
Transistor Mounting
Panel
SVHC
To Be Advised
IGBT Configuration
H Bridge
DC Collector Current
75A
Collector Emitter Saturation Voltage
3V
Power Dissipation
310W
Operating Temperature Max
150°C
Transistor Case Style
Module
No. of Pins
12Pins
Collector Emitter Voltage Max
600V
Product Range
U- Series
Technical Docs (1)
Associated Products
1 Product Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:No
RoHS Phthalates Compliant:No
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate